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The formation of silicon carbide (SiC) in the center of the irradiated spot was found after 100 pulses. Published: 2014. Source: Journal of Laser Micro/Nanoengineering, 10(1), 43-48 (2015)

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3.4 Desorption of silicon from silicon carbide 3.5 Graphite oxidation 3.6 Reduction of graphene oxide 3.7 Ultrasound-assisted exfoliation 3.8 Electrochemical process 3.9 Detonation reaction 3.10 Graphite intercalation 3.11 Agricultural waste processing 5 Unique

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1.1 This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO 2 ) and its attendant crystalline growth.

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Table of contents – Volume 27, Issue 7 Show all volumes and issues Tables of content are generated automatically and are based on records of articles contained that are available in the TIB-Portal index. Due to missing records of articles

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carbide forming essentially

The present invention relates to a technique for forming silicon carbide coated porous filters for use in filtering molten metal, especially copper and copper alloy melts. The technique comprises preparing a silicon carbide containing slurry having a viscosity in the range of about 1 to about 50, preferably from about 5 to about 30, centipoise and impregnating a rigid porous substrate material

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Toyota and Denso develop SiC power semiconductor for …

20/5/2014· Toyota intends to leverage the benefits of high frequency and high efficiency of SiC power semiconductors to enable PCU downsizing of 80%. Click to enlarge. Toyota Motor Corporation, in collaboration with Denso Corporation (Denso) and Toyota Central R&D Labs., Inc. (Toyota CRDL), has developed a silicon carbide (SiC) power semiconductor

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