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Silicon carbide heating elements can be used in the furnace temperature 600C-1600C, directly in the air use as well, and it need not any protective atmosphere. Because of SiC heating elements well performance, they are widely used in high temperature furnace, ceramics, glass, analysis and test, semiconductor, science research etc.

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Silicon Carbide Contamination - CR4 Discussion Thread

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To manufacture Reaction Bonded Silicon Carbide (RBSC), Silicon is infiltrated into a pre-formed silicon carbide/carbon powder green body which is then fired. This gives rise to around 10% free silicon, which fills the pores. The resulting microstructure has low

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Glass polishing silicon carbide sic powder 2000 mesh 1. Description Silicon Carbide Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite.

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Silicon Carbide Product Specifiion: Item Unit SSIC RBSIC SISIC R-SIC Purity ( % ) ≥ 99 ≥90% ≥ 99 Appliion temperature ºC 1700 1380 1650 Density g/CM 2 ≥3.10-3.15 ≥3.02 2.65-2.75 Open porosity % ≤0.1 ≤0.1 Hardness ≥92 HRA 2400 Kg/mm2 1800-2000

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RBSC can tolerate a wider range of acids and alkalis than either tungsten carbide or alumina. Its oxidation resistance helps to give long service life in furnace appliions. Technical Data for Silicon-Carbide---Reaction-Bonded

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